По индивидуальному заказу, типовой размер 650–1000 мкм
Чистота:
4N5‑5N высокой чистоты
Характер продукции
Product Overview The 8-inch (200mm) sapphire wafer is a large-format semiconductor substrate fabricated from high-purity synthetic single-crystal alumina (α-Al₂O₃). It serves as a core foundational substrate for LED epitaxy, GaN power devices and RF optoelectronic devices in the third-generation semiconductor industry. The single-crystal ingot is predominantly grown via the Kyropoulos method, and processed through precision procedures including multi-wire slicing, lapping and