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Created with Pixso. Custom Silicon Carbide (SiC) Stepped Ceramic Plate for Semiconductor Equipment

Custom Silicon Carbide (SiC) Stepped Ceramic Plate for Semiconductor Equipment

Наименование марки: ZMSH
MOQ: 10
Время доставки: 2-4 НЕДЕЛИ
Условия оплаты: Т/Т
Подробная информация
Место происхождения:
ШАНХАЙ, КИТАЙ
Материал:
Силиконовый карбид (SiC)
Чистота:
≥ 99% (типично)
Плотность:
3,10 – 3,20 г/см³
Твердость:
≥ 2500 ВН
изгибная прочность:
≥ 350 МПа
Модуль упругости:
~410 ГПа
Теплопроводность:
120 – 200 Вт/м·К
Коэффициент теплового расширения (КТР):
~4,0 × 10⁻⁶/К
Характер продукции

Custom Silicon Carbide (SiC) Stepped Ceramic Plate for Semiconductor Equipment


Product Overview


This custom silicon carbide ceramic component features a circular plate geometry with a precision-machined stepped edge. The stepped structure enables accurate axial positioning and stable integration into semiconductor process chambers and advanced thermal systems.


Manufactured from high-purity SiC ceramic, the component offers excellent resistance to high temperatures, plasma exposure, chemical corrosion, and thermal shock. The surface is intentionally left unpolished, as the component is designed for functional and structural use rather than optical or electronic applications.


Typical uses include chamber covers, liner caps, support plates, and protective structural components in semiconductor manufacturing equipment where long-term dimensional stability and material reliability are critical.


Custom Silicon Carbide (SiC) Stepped Ceramic Plate for Semiconductor Equipment 0Custom Silicon Carbide (SiC) Stepped Ceramic Plate for Semiconductor Equipment 1


Key Features


  • High-purity silicon carbide ceramic material

  • Stepped edge design for precise positioning and assembly

  • Ground, unpolished surface optimized for functional performance

  • Excellent thermal stability and low thermal deformation

  • Superior resistance to plasma, chemicals, and corrosive gases

  • High mechanical strength and stiffness

  • Suitable for vacuum and clean process environments

  • Custom dimensions and geometries available


Technical Parameters (Typical)


Parameter Specification
Material Silicon Carbide (SiC)
Purity ≥ 99% (typical)
Density 3.10 – 3.20 g/cm³
Hardness ≥ 2500 HV
Flexural Strength ≥ 350 MPa
Elastic Modulus ~410 GPa
Thermal Conductivity 120 – 200 W/m·K
Coefficient of Thermal Expansion (CTE) ~4.0 × 10⁻⁶ /K
Maximum Working Temperature > 1600°C (in inert atmosphere)
Maximum Working Temperature (Air) ~1400°C
Electrical Resistivity High (insulating grade available)
Surface Finish Ground / Unpolished
Flatness Custom tolerance available
Edge Condition Chamfered or customer-specified
Environment Compatibility Vacuum, plasma, corrosive gases

Note: Parameters may vary depending on SiC grade, forming method, and machining requirements.


Typical Applications


  • Semiconductor process chambers (CVD, PECVD, LPCVD, etching systems)

  • Chamber covers and liner caps

  • Structural support plates in high-temperature equipment

  • Plasma-facing or plasma-adjacent ceramic components

  • Advanced vacuum processing systems

  • Custom ceramic structural parts for semiconductor and optoelectronic equipment


Customization Capabilities


  • Custom outer diameter and thickness

  • Custom step height and width

  • Optional fine grinding or polishing upon request

  • Machining according to customer drawings or samples

  • Small batch, prototype, and volume production supported


FAQ


Q1: What is the primary function of this SiC stepped ceramic plate?

A:
This component is primarily used as a structural or functional ceramic part, such as a chamber cover, support plate, or liner cap, in semiconductor and high-temperature process equipment. The stepped design allows accurate positioning and stable assembly within equipment structures.


Q2: Why is the surface unpolished?

A:
The unpolished surface is intentional. This component is not used for optical or electronic functions, but for structural and protective purposes. Ground surfaces are sufficient and often preferred for improved mechanical stability and reduced manufacturing cost in process chamber applications.


Q3: Is this component suitable for plasma environments?

A:
Yes. Silicon carbide offers excellent resistance to plasma erosion and chemical corrosion, making it suitable for plasma-facing or plasma-adjacent applications in semiconductor process chambers.


Q4: Can this part be used in vacuum systems?

A:
Yes. The material and manufacturing process are compatible with vacuum environments. SiC ceramic exhibits low outgassing and maintains dimensional stability under vacuum and thermal cycling conditions.


Q5: Can dimensions and step geometry be customized?

A:
Absolutely. Outer diameter, thickness, step height, step width, and edge features can all be customized according to customer drawings or application requirements.


Q6: Do you offer polished or coated versions?

A:
Optional surface finishing, including fine grinding or polishing, can be provided upon request. Coatings may also be available depending on the application and operating environment.


Q7: What industries typically use this type of component?

A:
This type of SiC ceramic component is commonly used in semiconductor manufacturing, optoelectronics, advanced vacuum systems, and high-temperature industrial processing equipment.


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